收藏本站
TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
4
LOW VOLTAGE OUTPUT
CHARACTERISTICS
-80
-60
V BS = 0V
T A = 25 ° C
V GS = -12V
-10V
2
V BS = 0V
T A = 25 ° C
V GS = -12V
-6V
-4V
-2V
-40
-20
0
-8V
-6V
-4V
-2V
0
-2
-4
0
-2
-4
-6
-8
-10
-12
-320
-160
0
160
320
10000
DRAIN - SOURCE VOLTAGE (V)
FORWARD TRANSCONDUCTANCE
vs. DRAIN - SOURCE VOLTAGE
-20
DRAIN -SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
5000
V BS = 0V
f = 1KHz
I DS = -5mA
-15
V BS = 0V
2V
4V
6V
2000
8V
10V
1000
500
T A = +25 ° C
I DS = -1mA
T A = +125 ° C
-10
-5
12V
200
100
0
V GS = V DS
T A = 25 ° C
0
-2
-4
-6
-8
-10
-12
0
-0.8
-1.6
-2.4
-3.2
-4.0
DRAIN - SOURCE VOLTAGE (V)
R DS (ON) vs. GATE - SOURCE VOLTAGE
GATE - SOURCE VOLTAGE (V)
OFF DRAIN - CURRENT vs.
TEMPERATURE
10000
1000
V DS = 0.4V
V BS = 0V
T A = +125 ° C
-10 X 10 -6
V DS = -12V
V GS = V BS = 0V
-10 X 10 -9
100
T A = +25 ° C
10
-10 X 10 -12
0
-2
-4
-6
-8
-10
-12
-50
-25
0
+25
+50
+75
+100 +125
GATE - SOURCE VOLTAGE (V)
TEMPERATURE ( ° C)
ALD1103
Advanced Linear Devices
3 of 9
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ALD1105PBL MOSFET 2N+2P 13.2V 14PDIP
ALD1106SBL MOSFET 4N-CH 13.2V QUAD 14SOIC
ALD1107SBL MOSFET 4P-CH 13.2V QUAD 14SOIC
ALD110800ASCL MOSFET N-CH 10.6V QUAD 16SOIC
ALD110802PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110804PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110808PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110814PCL MOSFET N-CH 10.6V QUAD 16PDIP
相关代理商/技术参数
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1103SBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105_12 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105DB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105SB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET